1 產品
| 圖片 | 型號 | 價格 | 數量 | 庫存 | 製造商 | 描述 | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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IXYS | MOSFET 2N-CH 150V 53A I4-PAC | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | 180W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 150V | 53A | 20 mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V |
