- Part Status :
- Packaging :
4 產品
| 圖片 | 型號 | 價格 | 數量 | 庫存 | 製造商 | 描述 | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
獲得報價 |
50,020
今天發貨 + 免運費
|
Infineon Technologies | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | ||
|
|
|
35,720
今天發貨 + 免運費
|
Infineon Technologies | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | |||
|
|
|
38,880
今天發貨 + 免運費
|
Infineon Technologies | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | |||
|
|
|
獲得報價 |
21,280
今天發貨 + 免運費
|
Infineon Technologies | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V |
