2 產品
| 圖片 | 型號 | 價格 | 數量 | 庫存 | 製造商 | 描述 | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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64,220
今天發貨 + 免運費
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Microsemi Corporation | MOSFET 2 N-CH 1200V 337A MODULE | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | |||
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67,460
今天發貨 + 免運費
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2140W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V |
