- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 產品
| 圖片 | 型號 | 價格 | 數量 | 庫存 | 製造商 | 描述 | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
19,360
今天發貨 + 免運費
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 937W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | |||
|
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21,940
今天發貨 + 免運費
|
Microsemi Corporation | MOSFET 2N-CH 1200V 105A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 500W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 105A | 25 mOhm @ 80A, 20V | 2.2V @ 4mA (Typ) | 197nC @ 20V | 3800pF @ 1000V |
